Cvd Graphene Copper Etching

For the fecl 3 etchant we found that the average size of the.

Cvd graphene copper etching.

The pmma pva graphene copper foil block was floated on the surface of a solution of 0 3 m ammonium persulfate aldrich 98 at 0 c for 24 h to etch the copper foil. After the copper was etched the pmma pva graphene block was rinsed with deionized water three times at 0 c and transferred onto a 100 nm thick sio 2 si substrate. We report a simple clean and highly anisotropic hydrogen etching method for chemical vapor deposited cvd graphene catalyzed by the copper substrate. Advanced materials 2016 28 29 6247 6252.

Synthesis of graphene films on copper foils by chemical vapor deposition. Figure 4 shows the raman spectra of the cvd grown bilayer graphene transferred onto pet wafers using the three different etching solutions. 2a and b show the etching time evolution of the graphene domain size on the copper foils etched by an fecl 3 or an nh 4 2 s 2 o 8 etchant. By exposing cvd graphene on copper foil to hydrogen flow around 800 c we observed that the initially continuous graphene can be etched to have many hexagonal openings.

Wei guo feng jing jian xiao ce zhou yuanwei lin shuai wang. If the raman spectra of bilayer graphene transferred to pet wafer is compared to that the one of bilayer graphene on copper figure 2 a it can be concluded that the different transfer steps affected the.